MJ11016G
Manufacturer:
On Semiconductor
Mfr.Part #:
MJ11016G
Datasheet:
Description:
BJTs TO-3 Through Hole NPN 200 W Collector Base Voltage (VCBO):60 V Collector Emitter Voltage (VCEO):60 V Emitter Base Voltage (VEBO):5 V
| Parameter | Value |
|---|---|
| Max Operating Temperature | 200 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tray |
| RoHS | Compliant |
| Polarity | NPN - Darlington |
| Power Dissipation | 200 W |
| Max Collector Current | 30 A |
| Collector Emitter Voltage (VCEO) | 60 V |
| Gain Bandwidth Product | 4 MHz |
| Collector Base Voltage (VCBO) | 60 V |
| Collector Emitter Saturation Voltage | 4 V |
| Emitter Base Voltage (VEBO) | 5 V |
| Max Cutoff Collector Current | 1 mA |
| Transistor Type | NPN |
Stock: 902
Distributors
pcbx
pcbxUnit Price$3.21624
Ext.Price$3.21624
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $3.21624 | $3.21624 |
| 10 | $2.41603 | $24.16030 |
| 25 | $2.17331 | $54.33275 |
| 50 | $1.95498 | $97.74900 |
| 100 | $1.75859 | $175.85900 |
| 300 | $1.75230 | $525.69000 |
| 500 | $1.74603 | $873.01500 |
| 1000 | $1.73978 | $1739.78000 |
| 3000 | $1.72734 | $5182.02000 |
| 5000 | $1.71499 | $8574.95000 |